• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
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  • 优先权
    • 专利摘要:
    PURPOSE: A particle deposition apparatus for manufacturing a standard wafer is provided to uniformly deposit monodisperse particles alone on the surface of the standard wafer. CONSTITUTION: A particle deposition apparatus for manufacturing a standard wafer is provided with an atomizer(1) for jetting aerosol state artificial particles, a dryer(2) for removing moisture from the particles, a neutralizer(3) for removing non-uniformly electrified charges from the particles, and a mobility deviation sorter(4) for passing uniform size and charge particles alone out of the particles of the neutralizer. The particle deposition apparatus further includes a particle deposition chamber(5) for depositing the passed particles on the standard wafer and a condensed core counter(6) for counting the number of the deposited particles. The atomizer is installed at the inner portion of an ultrasonic vibration bath.
    公开号:KR20040040111A
    申请号:KR1020020068442
    申请日:2002-11-06
    公开日:2004-05-12
    发明作者:최정환；이현배
    申请人:동부전자 주식회사；
    IPC主号:
    专利说明:

    Particle deposition apparatus for standard wafer manufacturing
    [12] The present invention relates to a particle deposition apparatus for standard wafer fabrication, and more particularly, to a particle deposition apparatus for standard wafer fabrication capable of uniformly depositing particles of a predetermined size on the surface of the standard wafer.
    [13] Recent trends in the semiconductor manufacturing process have resulted in miniaturization and high integration. As a result, the probability of defects due to refinement of line width is gradually increasing, and the importance of yield improvement is also increasing. Therefore, the importance of particle counting devices for analyzing particle defects, etc. generated in the process is also greatly increased, and the standard wafers used to generate the calibration curve of the inspection equipment is manufactured by the particle deposition apparatus.
    [14] Referring to Fig. 1, a block diagram of a particle deposition apparatus for manufacturing such a conventional standard wafer is shown.
    [15] As shown in the drawing, the conventional particle deposition apparatus includes compressed air, artificial particles 8, and ultrapure water 7, an atomizer 1 for spraying artificial particles 8 in an aerosol state, The dryer 2 removes moisture from the artificial particle 8 from the atomizer 1 and dries, and the uniformly charged charge is removed from the artificial particle 8 from the dryer 2. And a moving deviation classifier 4 for classifying and passing only the particles 8 having a predetermined size and a constant charge among the artificial particles 8 from the neutralizer 3, and the moving deviation classifier. And a particle deposition chamber 5 for depositing the artificial particles 8 from (4) on the standard wafer 9, and a condensation nucleus counter 6 for counting the number of particles 8 to be deposited.
    [16] In this case, the artificial particle 8 is typically polystyrene latex (PSL), and in some cases, actual particles, that is, titanium (Ti), tungsten (W), silicon (Si), and silicon oxide (SiO 2). Aluminum oxide (Al 2 O 3), titanium oxide (TiO 2), silicon nitride (Si 3 N 4), or the like may be used.
    [17] In the particle deposition apparatus, compressed air is first injected into the atomizer 1, whereby artificial particles 8 in an aerosol state are injected through the outlet pipe.
    [18] The artificial particles 8 are discharged by removing moisture from the dryer 2, and then the charges of the artificial particles 8 irregularly charged in the neutralizer 3 are neutralized and removed, and again, the artificial particles 8 Is charged to have a charge of a constant polarity (usually a cathode).
    [19] Subsequently, only particles 8 having a constant size and a constant charge are sorted and passed through the moving deviation classifier 4. That is, the particle 8 has the force of the electrostatic force due to the electric field and the fluid resistance force due to the relative velocity of the particle 8 and the fluid, so that only particles 8 having the same electrical mobility can be extracted. Will be.
    [20] By passing only the same particles 8 as described above, the particles 8 are applied to the wafer 9 located in the particle deposition chamber 5, and further supplied to the condensation nucleus counter 6 to deposit particles 8. By counting the number of), the standard wafer 9 used in the particle counting apparatus is manufactured.
    [21] By the way, the manufactured standard wafer should be deposited only uniform monodisperse particles, but artificial particles such as atomizer polystyrene latex maintains a high poly-disperse, and between particles Aggregate with each other or settle in ultrapure water may cause a large number of multiplets (such as particles, triplets, etc.) to be deposited on the wafer. That is, as shown in FIG. 2, artificial particles of doublet are sometimes deposited on the wafer, and such a wafer cannot be used as a standard wafer and must be discarded.
    [22] In addition, the actual particles (titanium (Ti), tungsten (W), silicon (Si), silicon oxide (SiO2), aluminum oxide (Al2O3), titanium oxide (TiO2) and silicon nitride (Si3N4)) are deposited as necessary for the process. In the case of high density, the specific gravity is higher than that of ultrapure water, which causes the sedimentation to the lower part of the atomizer. Therefore, it is not possible to form monodisperse particles well. There is a problem that does not calculate the exact particle concentration in the particle deposition apparatus.
    [23] In addition, due to the above problem, a plurality of wafers are required for manufacturing a standard wafer (related to deterioration of quality), and the accuracy of deposited particles may be degraded. In addition, when the concentration of the polystyrene latex solution and the actual particles is lowered, there is a problem in that the time required for depositing the particles is very long.
    [24] Accordingly, the present invention has been made to solve the above-mentioned conventional problems, an object of the present invention is to provide a particle deposition apparatus for standard wafer manufacturing that can uniformly deposit particles of uniform size on the surface of the standard wafer with monodispersity. To provide.
    [25] It is another object of the present invention to provide a particle deposition apparatus for standard wafer fabrication that can rapidly deposit monodisperse particles onto a wafer.
    [26] Another object of the present invention is to provide a particle deposition apparatus for standard wafer fabrication, in which actual particles can be uniformly deposited with monodispersity.
    [1] 1 is a block diagram showing the configuration of a particle deposition apparatus for manufacturing a conventional standard wafer.
    [2] 2 is an explanatory view showing a state in which two particles are deposited by overlapping with a conventional particle deposition apparatus.
    [3] 3 is a block diagram showing the configuration of a particle deposition apparatus for producing a standard wafer according to the present invention.
    [4] 4 is an explanatory diagram showing a state in which one particle is correctly deposited when the particle deposition apparatus according to the present invention is used.
    [5] Description of the main symbols in the drawings
    [6] One; Atomizer2; dryer
    [7] 3; Neutralizer 4; Moving deviation classifier
    [8] 5; Particle Deposition Chamber
    [9] 6; Condensation nucleus counter 7; Ultrapure water
    [10] 8; Particle 9; wafer
    [11] 11; Ultrasonic vibration bath 12; Heating element
    [27] In order to achieve the above object, the present invention provides an atomizer for injecting artificial particles in an aerosol state, a dryer for removing and drying moisture from artificial particles from the atomizer, and the dryer. A neutralizer for removing non-uniformly charged charges from the artificial particles from the particles and having a constant charge; a moving deviation classifier for classifying only particles having a certain size and a constant charge among the artificial particles from the neutralizer; In the particle deposition apparatus for standard wafer fabrication comprising a particle deposition chamber for depositing artificial particles from a classifier on a standard wafer, and a condensation nucleus counter for counting the number of deposited particles, the atomizer is configured such that the artificial particles are monodisperse. The ultrasonic vibration tank is installed inside The.
    [28] Here, a heating member for heating the atomizer may be further installed inside the ultrasonic vibration tank.
    [29] According to the particle deposition apparatus for standard wafer fabrication according to the present invention as described above, by applying ultrasonic vibration to the artificial particle inside the atomizer, the artificial particle has the advantage of easily monolithic.
    [30] In addition, by applying heat to the atomizer, the momentum of the artificial particles therein is increased, and accordingly, the deposition rate of the artificial particles is also increased.
    [31] In addition, the ultrasonic vibration and the attachment of the heating member as described above, there is an advantage in that not only artificial particles but also actual particles can be uniformly deposited on the wafer with monodispersity.
    [32] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art may easily implement the present invention.
    [33] Here, the same components as in the prior art use the same reference numerals as in the prior art, and the description of the same components as in the prior art is minimized.
    [34] 3, there is shown a block diagram of a particle deposition apparatus for manufacturing a standard wafer according to the present invention.
    [35] As shown, the particle deposition apparatus for manufacturing a standard wafer according to the present invention removes moisture from an atomizer 1 for spraying artificial particles 8 in an aerosol state and from artificial particles 8 from the atomizer 1. A dryer (2) for drying and drying, a neutralizer (3) for removing non-uniformly charged charges from the artificial particles (8) from the dryer (2) and having a constant charge, and an artificial from the neutralizer (3). The moving deviation classifier 4 for classifying and passing only the particles 8 having a certain size and a constant charge in the particles 8 and the artificial particles 8 from the moving deviation classifier 4 are transferred to the standard wafer 9. The composition consisting of the particle deposition chamber 5 to be deposited and the condensation nucleus counter 6 to count the number of particles 8 to be deposited is the same as in the prior art.
    [36] However, the present invention is characterized in that the atomizer (1) is installed inside the ultrasonic vibration tank (11). The ultrasonic vibration tank 11 adds ultrasonic vibration energy to the artificial particles 8 in the atomizer 1 so that the aggregated artificial particles 8 are monodisperse and settle in the ultrapure water 7. The artificial particles 8 are easily separated from each other.
    [37] In addition, a heating member 12 is further installed inside the ultrasonic vibration tank 11 so as to heat the atomizer 1. The heating member 12 increases the kinetic energy of the artificial particle 8 in the atomizer 1, thereby allowing the artificial particle 8 to move more actively, and by this phenomenon, the artificial particle ( Make the concentration of 8) uniform.
    [38] Here, the particle 8 is not only artificial particles such as polystyrene latex, but also titanium (Ti), tungsten (W), silicon (Si), silicon oxide (SiO 2), aluminum oxide (Al 2 O 3), titanium oxide (TiO 2) and Naturally, the same applies to actual particles such as silicon nitride (Si 3 N 4).
    [39] Referring to the operation of the particle deposition apparatus for manufacturing a standard wafer according to the present invention as follows. Here, the description of the overlapping operation with the prior art will be minimized, and the key operations of the present invention will be mainly described.
    [40] First, the ultrasonic vibration bath 11 containing the atomizer 1 inside is preferably operated for about 5 to 10 minutes before depositing the particles 8 (artificial particles or actual particles). Alternatively, the particle deposition process may be performed simultaneously while operating for about 5 minutes. Of course, the height of the ultrapure water 7 inside the atomizer 1 is set lower than the discharge pipe of the atomizer 1.
    [41] By the operation of the ultrasonic vibration tank 11 as described above, the aggregated particles 8 and the settled particles 8 in the atomizer 1 are separated from each other.
    [42] In addition, it is preferable that the heating member 12 also operates during the operation of the ultrasonic vibration tank 11, and the particles 8 in the atomizer 1 are moved up and down by the temperature rise by the heating member 12. Exercise more actively to the left and right. That is, the concentration gradient of the particles 8 inside the atomizer 1 is made uniform, so that the particles 8 supplied to the surface of the wafer 9 are made uniform.
    [43] Of course, the first mono-dispersed particles (8) selectively through the atomizer (1), the dryer (2), the neutralizer (3), the moving deviation classifier (4) selectively as desired conventionally It is fed to the particle deposition chamber 5 to produce a standard wafer 9.
    [44] At this time, more monodisperse particles 8 pass through the moving deviation classifier 4 than in the prior art, so that the deposition rate is improved and the waste of the wafer 9 can be suppressed. That is, as shown in Fig. 4, the mono-dispersed particles 8 are accurately supplied to the predetermined position of the wafer 9 by the above-described action.
    [45] As described above, although the present invention has been described with reference to the above embodiments, the present invention is not limited thereto, and various modified embodiments may be possible without departing from the scope and spirit of the present invention.
    [46] Therefore, according to the particle deposition apparatus for standard wafer fabrication according to the present invention, by applying ultrasonic vibration to the artificial particles inside the atomizer, the artificial particles can be easily formed into a single phase.
    [47] In addition, by applying heat to the atomizer, the particle momentum therein is increased, thereby increasing the deposition rate of artificial particles.
    [48] In addition, the ultrasonic vibration and the attachment of the heating member as described above, there is an effect that can be uniformly deposited on the wafer with monodispersity as well as artificial particles.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] An atomizer for injecting artificial particles in an aerosol state, a dryer for removing and drying moisture from the artificial particles from the atomizer, and a non-uniformly charged one from the artificial particles from the dryer. A neutralizer for removing charges and having a constant charge; a moving deviation classifier for classifying and passing only particles having a certain size and constant charge; and depositing artificial particles from the moving deviation classifier on a standard wafer In the particle deposition apparatus for standard wafer manufacturing comprising a particle deposition chamber to make, and a condensation nucleus counter for counting the number of particles to be deposited,
    The atomizer is a particle deposition apparatus for standard wafer manufacturing, characterized in that the artificial particles are installed inside the ultrasonic vibration tank so that the monodispersion.
    [2" claim-type="Currently amended] The particle deposition apparatus of claim 1, wherein a heating member for heating the atomizer is further installed inside the ultrasonic vibration tank.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-11-06|Application filed by 동부전자 주식회사
    2002-11-06|Priority to KR1020020068442A
    2004-05-12|Publication of KR20040040111A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020020068442A|KR20040040111A|2002-11-06|2002-11-06|particle deposition apparatus for manufacturing reference wafer|
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